九州大学 大学院システム情報科学研究院 情報エレクトロニクス部門木野研究室
 九州大学

研究業績

学術論文

2022年

  1. H. Kino*, T. Fukushima, and T. Tanaka, “Enhancement of carrier mobility in metal-oxide semiconductor field-effect transistors using negative thermal expansion gate electrodes,” Appl. Phys. Express, vol. 15, no. 11, p. 111004, 2022.
    DOI: 10.35848/1882-0786/ac9d24
  2. Y. Miwa, H. Kino*, T. Fukushima, and T. Tanaka, “Electrochemical characterization of ZnO-based transparent materials as recording electrodes for neural probes in optogenetics,” Journal of Vacuum Science & Technology B, vol. 40, no. 5, p. 052202, Sep. 2022.
    DOI: 10.1116/6.0001836

2021年

  1. H. Kino*, T. Fukushima, and T. Tanaka, “High-thermal-stability resistor formed from manganese nitride compound that exhibits the saturation state of the mean free path,” Appl. Phys. Express, vol. 14, no. 9, p. 091003, 2021.
    DOI: 10.35848/1882-0786/ac18b0

2020年

  1. H. Kino*, T. Fukushima, and T. Tanaka, “Generation of STDP with non-volatile tunnel-FET memory for large-scale and low-power spiking neural networks,” IEEE J. Electron Devices Soc., vol. 8, pp. 1266–1271, 2020.
    DOI: 10.1109/JEDS.2020.3025336
  2. H. Kino*, T. Fukusima, and T. Tanaka, “Symmetric and asymmetric spike-timing-dependent plasticity function realized in a tunnel-field-effect-transistor-based charge-trapping memory,” Jpn. J. Appl. Phys., vol. 59, no. SG, SGGB12, 2020.
    DOI: 10.35848/1347-4065/ab6867

(*corresponding author)

学会発表

2023年

  1. H. Kino, T. Fukushima, and T. Tanaka, “Negative-Thermal-Expansion Gate Electrode to Introduce Tensile Strain into the Channel of MOSFETs for Mobility Enhancement,” 4th Electron Devices Technol. Manuf. Conf. EDTM 2023 - Proc., pp. 594–596, Mar. 2023.
    DOI: 10.1109/EDTM55494.2023.10102952
  2. 木野 久志、“人工網膜およびスピントロニクスデバイスへの三次元集積化技術の応用”、電気化学会第90回大会 特別講演、仙台.(招待講演)

2022年

  1. H. Kino, T. Fukushima, and T. Tanaka, “Developing a Low-Temperature Flip-Chip Bonding Technology with In/Au Microbumps to Suppress the Thermal Load on Spintronics Devices,” 2022 IEEE Int. Interconnect Technol. Conf. IITC 2022, pp. 82-84, Jun. 2022.
    DOI: 10.1109/IITC52079.2022.9881288
  2. 木野 久志、“負熱膨張微粒子による三次元集積回路内の熱応力の高効率制御”、一般財団法人粉体粉末冶金協会 2022年度秋季大会(第130回講演大会)、京都. (招待講演)

2021年

  1. H. Kino, T. Fukushima, and T. Tanaka, “Development of Ultrathin-Metal-Capped Transparent Conductive Film Electrode for Optical Biomedical Devices,” 2021 Int. Conf. Solid State Devices and Materials SSDM 2021, pp. 407-408, Sep. 2021.
  2. H. Kino, T. Fukushima, and T. Tanaka, “Development of Manganese Nitride Resistor with Near-Zero Temperature-Coefficient of Resistance to Achieve High-Thermal-Stability ICs,” 2021 IEEE Int. Interconnect Technol. Conf. IITC 2021, Jun. 2021.
    DOI: 10.1109/IITC51362.2021.9537336

2020年

  1. H. Kino, T. Fukushima, and T. Tanaka, “Development of Non-Volatile Tunnel-FET Memory as a Synaptic Device for Low-Power Spiking Neural Networks,” 4th Electron Devices Technol. Manuf. Conf. EDTM 2020 - Proc., pp. 2020–2022, Mar. 2020.
    DOI: 10.1109/EDTM47692.2020.9118027
  2. H. Kino, T. Fukushima, and T. Tanaka, “Development of Manganese Nitride Wiring with High Thermal Stability Caused by Saturation of the Mean Free Path,” 2020 Int. Conf. Solid State Devices and Materials SSDM 2020, Sep. 2020.
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